The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Apr. 25, 2006
Byung-ki Cheong, Seoul, KR;
Jeung-hyun Jeong, Seoul, KR;
Dae-hwan Kang, Seoul, KR;
Han Ju Jung, Seoul, KR;
Taek Sung Lee, Seoul, KR;
IN Ho Kim, Seoul, KR;
Won Mok Kim, Seoul, KR;
Kyeong Seok Lee, Seoul, KR;
Byung-ki Cheong, Seoul, KR;
Jeung-hyun Jeong, Seoul, KR;
Dae-Hwan Kang, Seoul, KR;
Han Ju Jung, Seoul, KR;
Taek Sung Lee, Seoul, KR;
In Ho Kim, Seoul, KR;
Won Mok Kim, Seoul, KR;
Kyeong Seok Lee, Seoul, KR;
Abstract
The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.