The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
May. 09, 2006
Applicants:
Gayle W. Miller, Colorado Springs, CO (US);
Thomas S. Moss, Colorado Springs, CO (US);
Mark A. Good, Colorado Springs, CO (US);
Inventors:
Gayle W. Miller, Colorado Springs, CO (US);
Thomas S. Moss, Colorado Springs, CO (US);
Mark A. Good, Colorado Springs, CO (US);
Assignee:
Atmel Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods and materials for silicon on insulator wafer production in which the doping concentration in a handle wafer is sufficiently high to inhibit dopant from diffusing from the bond wafer during or after bonding to the handle wafer.
Miller, Gayle. (2009). Method and materials to control doping profile in integrated circuit substrate material (U.S. Patent No. 7629649). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7629649
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile