The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
May. 02, 2005
Applicants:
Min She, Albany, CA (US);
Tsu-jae King, Fremont, CA (US);
Inventors:
Min She, Albany, CA (US);
Tsu-Jae King, Fremont, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Charge migration in a SONOS memory cell is eliminated by physically separating nitride layer storage sites with dielectric material. Increased storage in a cell is realized with a double gate structure for controlling bit storage in line channels between a source and a drain, such as with a FinFET structure in which the gates are folded over the channels on sides of a fin.
She, Min. (2009). Two bit/four bit sonos flash memory cell (U.S. Patent No. 7629640). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7629640
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile