The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Oct. 31, 2007
Applicant:
John Twynam, Yamatokooriyama, JP;
Inventor:
John Twynam, Yamatokooriyama, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a heterostructure field effect transistor (MISHFET), a source ohmic electrodeand a drain ohmic electrodeare formed on an AlGaN barrier layerA SiNx gate insulatora p-type polycrystalline SiC layerand a Pt/Au gate electrodebeing an ohmic electrode are formed one on another on the AlGaN barrier layerSince the p-type polycrystalline SiC layeris relatively large in work function, the channel of the MISHFET is depleted even in its zero-bias state, so that the normally-OFF operation occurs.