The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Apr. 18, 2006
Applicants:
Samson Mil'shtein, Chelmsford, MA (US);
John F. Palma, Dedham, MA (US);
Inventors:
Samson Mil'shtein, Chelmsford, MA (US);
John F. Palma, Dedham, MA (US);
Assignee:
University of Massachusetts, Shrewsbury, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field effect transistor (FET) having at least two independently biased gates can provide uniform electric field in the channel region of the FET. The same AC voltage may be applied to each gate for modulating the FET. One of the gates is positioned closer to the channel region than the other gate. Such a FET allows tailoring the electric field in the channel region of the FET so that it is substantially uniform. The FET exhibits desirable performance characteristics, including having a constant transconductance.