The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Jun. 16, 2008
Tadao Toda, Kyoto, JP;
Tsutomu Yamaguchi, Nara, JP;
Masayuki Hata, Kadoma, JP;
Yasuhiko Nomura, Moriguchi, JP;
Tadao Toda, Kyoto, JP;
Tsutomu Yamaguchi, Nara, JP;
Masayuki Hata, Kadoma, JP;
Yasuhiko Nomura, Moriguchi, JP;
Sanyo Electric Co., Ltd., Moriguchi-shi, JP;
Abstract
A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.