The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Jan. 27, 2006
Tetsuya Taki, Aichi-ken, JP;
Mitsuhisa Narukawa, Aichi-ken, JP;
Masato Aoki, Aichi-ken, JP;
Koji Okuno, Aichi-ken, JP;
Yusuke Toyoda, Aichi-ken, JP;
Kazuki Nishijima, Aichi-ken, JP;
Shuhei Yamada, Aichi-ken, JP;
Tetsuya Taki, Aichi-ken, JP;
Mitsuhisa Narukawa, Aichi-ken, JP;
Masato Aoki, Aichi-ken, JP;
Koji Okuno, Aichi-ken, JP;
Yusuke Toyoda, Aichi-ken, JP;
Kazuki Nishijima, Aichi-ken, JP;
Shuhei Yamada, Aichi-ken, JP;
Toyota Gosei Co., Ltd., Nishikasugai-gun, Aichi-ken, JP;
Abstract
A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provided in the vicinity of the interface between the first layer and the well layer, and a second region provided in the vicinity of the interface between the second layer and the well layer. A composition of the first and second regions gradually changes such that the lattice constants of the first and second layers approach the lattice constant of the well layer as a position approaches said well layer.