The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Aug. 26, 2004
Qi Wang, Littleton, CO (US);
Tihu Wang, Littleton, CO (US);
Matthew R. Page, Littleton, CO (US);
Yanfa Yan, Littleton, CO (US);
Qi Wang, Littleton, CO (US);
Tihu Wang, Littleton, CO (US);
Matthew R. Page, Littleton, CO (US);
Yanfa Yan, Littleton, CO (US);
Alliance For Sustainable Energy, LLC, Golden, CO (US);
Abstract
In a method of making a c-Si-based cell or a μc-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH/Hthrough the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH/H.