The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Nov. 14, 2008
Norifumi Tokuda, Tokyo, JP;
Shigeru Kusunoki, Tokyo, JP;
Norifumi Tokuda, Tokyo, JP;
Shigeru Kusunoki, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device in which a main current flows in a direction of the thickness of a semiconductor substrate, to attain desirable electric characteristics. P type semiconductor regions and N type semiconductor regions are alternately provided with an interval therebetween, both regions in a surface of a second main surface of a semiconductor substrate. Between the P type semiconductor regions and the N type semiconductor regions, trenches formed in the surface of the semiconductor substrate are filled with insulators, thereby forming trench isolation structures. Moreover, a second main electrode is formed in contact with both the P type semiconductor regions and the N type semiconductor regions.