The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Dec. 29, 2006
Whee Won Cho, Chungcheongbuk-do, KR;
Jung Geun Kim, Seoul, KR;
Seong Hwan Myung, Kyeongki-do, KR;
Cheol MO Jeong, Kyeongki-do, KR;
Whee Won Cho, Chungcheongbuk-do, KR;
Jung Geun Kim, Seoul, KR;
Seong Hwan Myung, Kyeongki-do, KR;
Cheol Mo Jeong, Kyeongki-do, KR;
Hynix Semiconductor Inc., Icheon-shi, KR;
Abstract
A method of manufacturing a flash memory device includes the steps of forming gate patterns for cells and gate patterns for select transistors over a semiconductor substrate, forming a buffer insulating layer on the resulting surface including the gate patterns, forming an insulating layer to form void in spaces between the gate patterns for cells, forming a nitride layer on the insulating layer, and forming a spacer on one side of each of the gate patterns for select transistors by a spacer etch process.