The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Feb. 11, 2004
Mario Di Ronza, München, DE;
Yannick Martelloni, Poing, DE;
Mario Di Ronza, München, DE;
Yannick Martelloni, Poing, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for repairing a memory comprising a Memory Built-In Self Repair (MBISR) structure comprises the steps of detection of defective storage cells, and redundancy allocation. The redundancy allocation step is carried out in such a way that it combines a row and/or column oriented redundancy repair approach with a word oriented redundancy repair approach. A Memory Built-In Self Repair (MBISR) device comprises at least one memory () with row and/or column redundancy, at least one row and/or column Memory Built-In Self Repair (MBISR) circuit (), and a word redundancy block (). Furthermore, a distributed MBISR structure as well as dedicated Column/Row MBISR circuits () are provided.