The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Dec. 06, 2007
GE Yang, Pleasanton, CA (US);
Hwong-kwo (Hank) Lin, Palo Alto, CA (US);
Charles Chew-yuen Young, Cupertino, CA (US);
Ge Yang, Pleasanton, CA (US);
Hwong-Kwo (Hank) Lin, Palo Alto, CA (US);
Charles Chew-Yuen Young, Cupertino, CA (US);
NVIDIA Corporation, Santa Clara, CA (US);
Abstract
One embodiment of the present invention sets forth a twelve transistor static random access memory storage cell that provides two write ports and three read ports. The write word line operates at twice the clock frequency. The write bit lines are differential to provide high-performance writes. Each read word line operates at the clock frequency. Single-ended read bit lines are used to provide read performance comparable to write performance. The resulting storage cell only requires four horizontal word lines and five vertical bit lines, enabling very dense, yet high-performance designs.