The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Aug. 14, 2007
Hideo Sakamoto, Kanagawa, JP;
Hideo Sakamoto, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
Contact holes (openings) () are created in the upper electrode () and the dielectric film () of a polysilicon-insulator-polysilicon (PIP) capacitive element to form a plurality of evaluation patterns wherein the lower electrode () and upper layer wiring lines () for measurement are electrically connected through contacts (). At least four evaluation patterns are created by a combination of two or more values of a distance L with different values of a width W. Since it can be assumed that a difference in the resistance value between the respective evaluation patterns is only due to the effect of a change in a rectangular region (W*L) between the contact holes (openings) (), it is possible to easily calculate the sheet resistance of the high-resistance portion from a change in the resistance value of each of the measurement patterns.