The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Jun. 28, 2006
Supriyo Datta, West Lafayette, IN (US);
Sayeef Salahuddin, West Lafayette, IN (US);
Supriyo Datta, West Lafayette, IN (US);
Sayeef Salahuddin, West Lafayette, IN (US);
Purdue Research Foundation, West Lafayette, IN (US);
Abstract
A transistor device may comprise a source having a first ferromagnetic contact thereto, a drain having a second ferromagnetic contact thereto, an electrically conductive gate positioned over a channel region separating the source and the drain, and an electrically insulating layer disposed between the gate and the channel region. The first and second ferromagnetic contacts have anti-parallel magnetic orientations relative to each other. The electrically insulating layer includes a number of paramagnetic impurities each having two spin states such that electrons interacting with the paramagnetic impurities cause the paramagnetic impurities to flip between the two spin states.