The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Apr. 23, 2007
Applicants:
Olof Tornblad, Los Gatos, CA (US);
Gordon MA, Phoenix, AZ (US);
Inventors:
Olof Tornblad, Los Gatos, CA (US);
Gordon Ma, Phoenix, AZ (US);
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
An LDMOS transistor comprises source, channel and extended drain regions. The extended drain region comprises a plurality of islands that have a conductivity type that is opposite to the extended drain region. The islands have a depth less than a depth of the extended drain region.