The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Jun. 09, 2006
Oleg Borisovich Shchekin, San Francisco, CA (US);
Mark Pugh, Los Gatos, CA (US);
Gerard Harbers, Sunnyvale, CA (US);
Michael R. Krames, Los Altos, CA (US);
John E. Epler, Milpitas, CA (US);
Oleg Borisovich Shchekin, San Francisco, CA (US);
Mark Pugh, Los Gatos, CA (US);
Gerard Harbers, Sunnyvale, CA (US);
Michael R. Krames, Los Altos, CA (US);
John E. Epler, Milpitas, CA (US);
Philips Lumileds Lighting Company, LLC, San Jose, CA (US);
Abstract
Low profile, side-emitting LEDs are described, where all light is efficiently emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED is a flip chip with the n and p electrodes on the same side of the LED, and the LED is mounted electrode-side down on a submount. A reflector is provided on the top surface of the LED so that light impinging on the reflector is reflected back toward the active layer and eventually exits through a side surface of the LED. A waveguide layer and/or one or more phosphors layers are deposed between the semiconductor layers and the reflector for increasing the side emission area for increased efficiency. Side-emitting LEDs with a thickness of between 0.2-0.4 mm can be created.