The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Oct. 30, 2008
Dong Seon Lee, Ansan-si, KR;
Eu Jin Hwang, Ansan-si, KR;
Dong Seon Lee, Ansan-si, KR;
Eu Jin Hwang, Ansan-si, KR;
Seoul Opto Device Co., Ltd., Ansan-si, KR;
Abstract
Disclosed is a light emitting diode having an active region of a multi quantum well structure. The active region is positioned between GaN-based N-type and P-type compound semiconductor layers. At least one of barrier layers in the active region includes an undoped InGaN layer and a Si-doped GaN layer, and the Si-doped GaN layer is in contact with a well layer positioned at a side of the P-type compound semiconductor layer therefrom. Accordingly, carrier overflow and a quantum confined stark effect can be reduced, thereby improving an electron-hole recombination rate. Further, disclosed is an active region of a multi quantum well structure including relatively thick barrier layers and relatively thin barrier layers.