The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Feb. 23, 2006
Christopher M. Fetzer, Santa Clarita, CA (US);
James H. Ermer, Burbank, CA (US);
Richard R. King, Thousand Oaks, CA (US);
Peter C. Cotler, Canyon Country, CA (US);
Christopher M. Fetzer, Santa Clarita, CA (US);
James H. Ermer, Burbank, CA (US);
Richard R. King, Thousand Oaks, CA (US);
Peter C. Cotler, Canyon Country, CA (US);
The Boeing Company, Chicago, IL (US);
Abstract
A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III-V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice matched to an adjacent substrate and a second buffer layer may be lattice matched to device layers disposed upon the second buffer layer. Moreover, multiple metamorphic buffer layers fabricated in this manner may be used in a single given device allowing multiple layers to have their band gaps and lattice constants independently selected from those of the rest of the device.