The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Jan. 07, 2008
Yasuki Aihara, Tokyo, JP;
Yasuki Aihara, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A field effect transistor having a T-shaped gate electrode is formed on a GaAs substrate, and the T-shaped gate electrode of the field effect transistor is coated with a SiOfilm. A lower electrode of a MIM capacitor is formed on the GaAs substrate. The active portion of the field effect transistor is coated with a fluorine-containing polymer layer. A SiN film, which is a capacity insulating film of the MIM capacitor, is formed on the fluorine-containing polymer layer and the lower electrode. After removing the SiN film from the fluorine-containing polymer layer, the fluorine-containing polymer layer is selectively removed from the SiOfilm and the SiN film. An upper electrode of the MIM capacitor is formed opposite the lower electrode on the SiN film.