The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Aug. 30, 2007
Hideto Ohnuma, Kanagawa, JP;
Masayuki Sakakura, Kanagawa, JP;
Yasuhiro Mitani, Osaka, JP;
Takuya Matsuo, Osaka, JP;
Hidehito Kitakado, Nara, JP;
Hideto Ohnuma, Kanagawa, JP;
Masayuki Sakakura, Kanagawa, JP;
Yasuhiro Mitani, Osaka, JP;
Takuya Matsuo, Osaka, JP;
Hidehito Kitakado, Nara, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon film on a substrate having an insulating surface, adding a metal element such as Ni for promoting crystallization to the amorphous silicon film, applying heat treatment to crystallize the amorphous silicon film, so that a crystalline silicon film is formed on the substrate, removing a silicon oxide film formed on the surface of the crystalline silicon film due to the heat treatment by a solution containing organic solvent and fluoride, and irradiating laser light or strong light to the crystalline silicon film.