The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Nov. 14, 2003
Applicants:
Aaron Partridge, Palo Alto, CA (US);
Markus Lutz, Palo Alto, CA (US);
Silvia Kronmueller, Schwaikheim, DE;
Inventors:
Aaron Partridge, Palo Alto, CA (US);
Markus Lutz, Palo Alto, CA (US);
Silvia Kronmueller, Schwaikheim, DE;
Assignee:
Robert Bosch GmbH, Stuttgart, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/30 (2006.01); B05D 3/02 (2006.01); H01L 21/00 (2006.01); H01L 21/76 (2006.01); H01L 21/30 (2006.01); H01L 21/302 (2006.01); H01L 21/469 (2006.01); C23F 1/00 (2006.01); B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon oxide layer is formed by oxidation or decomposition of a silicon precursor gas in an oxygen-rich environment followed by annealing. The silicon oxide layer may be formed with slightly compressive stress to yield, following annealing, an oxide layer having very low stress. The silicon oxide layer thus formed is readily etched without resulting residue using HF-vapor.