The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Dec. 13, 2006
A. Dorian Challoner, Manhattan Beach, CA (US);
Kirill V. Shcheglov, Los Angeles, CA (US);
A. Dorian Challoner, Manhattan Beach, CA (US);
Kirill V. Shcheglov, Los Angeles, CA (US);
California Institute of Technology, Pasadena, CA (US);
The Boeing Company, Chicago, IL (US);
Abstract
An inertial sensor includes a mesoscaled disc resonator comprised of micro-machined substantially thermally non-conductive wafer with low coefficient of thermal expansion for sensing substantially in-plane vibration, a rigid support coupled to the resonator at a central mounting point of the resonator, at least one excitation electrode within an interior of the resonator to excite internal in-plane vibration of the resonator, and at least one sensing electrode within the interior of the resonator for sensing the internal in-plane vibration of the resonator. The inertial sensor is fabricated by etching a baseplate, bonding the substantially thermally non-conductive wafer to the etched baseplate, through-etching the wafer using deep reactive ion etching to form the resonator, depositing a thin conductive film on the through-etched wafer. The substantially thermally non-conductive wafer may comprise a silicon dioxide glass wafer, which is a silica glass wafer or a borosilicate glass wafer, or a silicon-germanium wafer.