The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
May. 19, 2008
Syotaro Ono, Kanagawa-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Masakatsu Takashita, Kanagawa-ken, JP;
Yasuto Sumi, Hyogo-ken, JP;
Masaru Izumisawa, Hyogo-ken, JP;
Hiroshi Ohta, Tokyo, JP;
Wataru Sekine, Hyogo-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Masakatsu Takashita, Kanagawa-ken, JP;
Yasuto Sumi, Hyogo-ken, JP;
Masaru Izumisawa, Hyogo-ken, JP;
Hiroshi Ohta, Tokyo, JP;
Wataru Sekine, Hyogo-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor apparatus includes a first semiconductor layer, a second semiconductor layer provided on a major surface of the first semiconductor layer, a third semiconductor layer provided on the major surface and being adjacent to the second semiconductor layer, a termination semiconductor layer provided on the major surface of the first semiconductor layer in a termination region outside the device region, a channel stop layer, and a channel stop electrode. The channel stop layer is provided in contact with the termination semiconductor layer on the major surface of the first semiconductor layer in an outermost peripheral portion outside the termination semiconductor layer and has a higher impurity concentration than the termination semiconductor layer. The channel stop electrode is provided on at least part of a surface of the channel stop layer and projects toward the termination semiconductor layer beyond at least a superficial portion of the channel stop layer.