The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Feb. 22, 2007
Won-joo Kim, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Jung-hoon Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A non-volatile memory device and a method of fabricating the same are provided. A non-volatile memory device may include a semiconductor substrate including a body and at least one pair of fins vertically protruding from the body and spaced apart from each other, and at least one control gate electrode on at least portions of outer side surfaces of the at least one pair of fins and extending onto top portions of the at least one pair of fins on an angle with the at least one pair of fins. The non-volatile memory device may further include at least one pair of gate insulating layers between the at least one control gate electrode and the at least one pair of fins, and at least one pair of storage node layers between the at least one pair of gate insulating layers and at least a portion of the at least one control gate electrode. The at least one control gate electrode may extend onto top portions of the at least one pair of fins in a zigzag fashion.