The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Aug. 18, 2006
Applicant:
Ryoji Suzuki, Mito, JP;
Inventor:
Ryoji Suzuki, Mito, JP;
Assignee:
Hitachi Cable, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01); H01S 5/00 (2006.01); H01S 5/343 (2006.01); H01S 3/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
A n-type GaAs buffer layer, a n-type GaInP buffer layer, a n-type AlGaInP cladding layer, an undoped AlGaAs guide layer, an AlGaAs/GaAs multiquantum well (MQW) active layer, a first p-type AlGaInP cladding layer, a p-type GaInP etching stopper layer, a second p-type AlGaInP cladding layer, a C-doped AlGaAs layer (Zn-diffusion suppressing layer), a p-type GaInP intermediate layer, and a p-type GaAs cap layerare sequentially grown on a n-type GaAs substrate
Suzuki, Ryoji. (2009). Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device (U.S. Patent No. 7622745). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7622745
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile