The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Nov. 01, 2004
Hideo Nagai, Osaka, JP;
Tetsuzo Ueda, Osaka, JP;
Masaaki Yuri, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
An LED bare chip which is one type of a semiconductor light emitting device () includes a multilayer epitaxial structure () composed of a p-GaN layer (), an InGaN/GaN MQW light emitting layer () and an n-GaN layer (). A p-electrode () is formed on the p-GaN layer (), and an n-electrode () is formed on the n-GaN layer (). An Au plating layer () is formed on the p-electrode (). The Au plating layer () supports the multilayer epitaxial structure () and conducts heat generated in the light emitting layer (). The Au plating layer () is electrically divided into two portions by a polyimide member (). One of the two portions (A) is connected to the p-electrode (), to be constituted as an anode power supply terminal, and the other portion (K) is connected to the n-electrode () by a wiring (), to be constituted as a cathode power supply terminal.