The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Jul. 02, 2004
Chang-tae Kim, Seongnam-si, KR;
Keuk Kim, Seongnam-si, KR;
Soo-kun Jeon, Kunsan-si, KR;
Pil-guk Jang, Yongin-si, KR;
Jong-won Kim, Kwangju-si, KR;
Chang-Tae Kim, Seongnam-si, KR;
Keuk Kim, Seongnam-si, KR;
Soo-Kun Jeon, Kunsan-si, KR;
Pil-Guk Jang, Yongin-si, KR;
Jong-Won Kim, Kwangju-si, KR;
Epivalley Co., Ltd., Koomi, KR;
Abstract
The present invention relates to a III-nitride semiconductor light-emitting device having high external quantum efficiency, provides a III-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened, thereby it is possible to increase external quantum efficiency of the light-emitting device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile