The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Sep. 04, 2008
Applicant:
Yong Soo Cho, Daejun-shi, KR;
Inventor:
Yong Soo Cho, Daejun-shi, KR;
Assignee:
Dongbu Electronics Co., Ltd., Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
There are provided a method for fabricating a MOSFET. The method includes: substrate, forming a semiconductor substrate, a germanium layer by implanting germanium (Ge) ions into a semiconductor substrate, forming an epitaxial layer doped with high concentration impurities over the germanium layer, forming a gate structure on the epitaxial layer, and forming source/drain regions with lightly doped drain (LDD) regions in the semiconductor substrate. The germanium layer supplies carriers into the epitaxial layer so that short channel effects are reduced.