The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Aug. 04, 2005
Chang Ju Kim, Anyang-si, KR;
Eun Jeong Jeong, Seongnam-si, KR;
Sang Yoon Lee, Seoul, KR;
Bon Won Koo, Suwon-si, KR;
Eun Kyung Lee, Seoul, KR;
Chang Ju Kim, Anyang-si, KR;
Eun Jeong Jeong, Seongnam-si, KR;
Sang Yoon Lee, Seoul, KR;
Bon Won Koo, Suwon-si, KR;
Eun Kyung Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method for fabricating an organic thin film transistor by application of an electric field. The method includes the steps of fabricating a common organic thin film transistor including a gate electrode, a gate insulating layer, an organic semiconductor layer and source/drain electrodes laminated on a substrate, and applying a direct current (DC) voltage to between the source and drain electrodes and applying an alternating current (AC) voltage to the gate electrode. The characteristics of an organic thin film transistor deteriorated after lamination of the respective layers can be recovered by the simple treatment. Therefore, the OTFT fabricated by the method has low threshold voltage, low driving voltage, high charge carrier mobility, and high Iratio.