The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Oct. 21, 2005
Applicants:
Jeffrey Birkmeyer, San Jose, CA (US);
Stephen R. Deming, San Jose, CA (US);
Zhenfang Chen, Cupertino, CA (US);
Inventors:
Jeffrey Birkmeyer, San Jose, CA (US);
Stephen R. Deming, San Jose, CA (US);
Zhenfang Chen, Cupertino, CA (US);
Assignee:
Fujifilm Dimatix, Inc., Lebanon, NH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of etching a silicon substrate is described. The method includes bonding a first silicon substrate to a sacrificial silicon substrate. The first silicon substrate is etched. A pressure is applied at an interface of the first silicon substrate and the sacrificial silicon substrate to cause the first silicon substrate to separate from the sacrificial silicon substrate. An apparatus having metal blades can be used to separate the substrates.