The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2009

Filed:

Nov. 21, 2007
Applicants:

Duk-ha Park, Suwon-si, KR;

Ki-whan Song, Yongin-si, KR;

Jin-young Kim, Seoul, KR;

Inventors:

Duk-Ha Park, Suwon-si, KR;

Ki-Whan Song, Yongin-si, KR;

Jin-Young Kim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/03 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device includes first and second memory cells having floating bodies, each of which includes a gate connected to a word line and an electrode connected to a common source line to store data. A controller applies a first voltage to the common source line, a negative second voltage to the word line, a third voltage as a first sense enable control voltage and the first voltage as a second sense enable control voltage during a first write period of a write operation. The controller also applies a fourth voltage to the common source line and the first voltage to the word line during a second write period of the write operation. The sensing portion amplifies a bit line and an inverted bit line to the third voltage or the first voltage, respectively, during the first write period in response to the first and second sense enable control voltages.


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