The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
May. 01, 2007
Hyeoung-won Seo, Yongin-si, KR;
Young-woong Son, Hwaseong-si, KR;
Kang-yoon Lee, Seongnam-si, KR;
Bong-soo Kim, Seongnam-si, KR;
Hyeoung-Won Seo, Yongin-si, KR;
Young-Woong Son, Hwaseong-si, KR;
Kang-Yoon Lee, Seongnam-si, KR;
Bong-Soo Kim, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device having a buried gate line with a shaped gate trench and a method of fabricating the same are disclosed. The semiconductor device includes a trench isolation layer provided in a semiconductor substrate to define a multi-surfaced active region/channel. A gate line extending to the trench isolation layer fills a portion of the gate trench. The gate trench is formed with a series of depressions to accommodate peaks in the channel. The combination of depressions/peaks operate to increase the effective area of the channel, thereby enabling smaller channel semiconductor devices to be formed without increasing the width thereof.