The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Apr. 25, 2006
Kenichi Kuboyama, Kanagawa, JP;
Kohji Kanamori, Kanagawa, JP;
Kenichi Kuboyama, Kanagawa, JP;
Kohji Kanamori, Kanagawa, JP;
NEC Electronics Corporation, Kawasaki, Kanagawa, JP;
Abstract
A semiconductor-memory device that reduces leak off due to miniaturization of memory cells, and comprises as a single unit cell: a substratehaving a trench section; a selector gatethat is located via an insulating filmon the substrate adjacent to the trench section; a first wellthat is formed on the surface of the substratebelow the selector gate; a floating gatethat is located via an insulating filmon the surface of the bottom section and sidewall section of the trench section; a second wellthat is formed on the surface of the bottom section of the trench sectionbelow the floating gate; a first diffusion areathat is formed on the surface of the bottom section of the trench section; and a control gatelocated via an insulating filmon top of the floating gate; and where the area near the sidewall surface and bottom surface of the trench sectionforms a channel in the selector gate; and the impurity density of the first wellis not more than the impurity density of the second well