The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Dec. 19, 2006
Applicant:
Norikatsu Koide, Nara-ken, JP;
Inventor:
Norikatsu Koide, Nara-ken, JP;
Assignee:
Toyoda Gosei Co., Ltd., Nishikasugai-gun, Aichi-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An AlGaN layeris formed on a silicon substratein a striped or grid pattern. A GaN layeris formed in regions A where the substrateis exposed and in regions B which are defined above the layer. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the AlGaN layer. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrateis exposed).