The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Mar. 19, 2007
Miyuki Yanagida, Narita, JP;
Akira Sato, Inba-gun, JP;
Miyuki Yanagida, Narita, JP;
Akira Sato, Inba-gun, JP;
TDK Corporation, Tokyo, JP;
Abstract
A production method of a dielectric ceramic composition, comprising a main component comprised of barium titanate, a fourth subcomponent comprised of an oxide of R1 (note that R1 is at least one kind selected from a first element group composed of rare earth elements having a value of effective ionic radius for coordination number 9 of less than 108 pm) and a fifth sub component comprised of an oxide of R2 (note that R2 is at least one kind selected from a second element group composed of rare earth elements having a value of effective ionic radius for coordination number 9 of 108 pm to 113 pm); comprising the steps of obtaining a post-reaction material by bringing the main component material reacting with a part of the fourth subcomponent material and/or a part of the fifth subcomponent material, and adding remaining materials of the fourth subcomponent and the fifth subcomponent to be included in the dielectric ceramic composition to the post-reaction material; wherein a ratio M1/M2 of the number of moles M1 of R1 of the fourth subcomponent and the number of moles M2 of R2 of the fifth subcomponent in the finally obtained dielectric ceramic composition satisfies 4<M1/M2≦100: by which specific permittivity and temperature characteristic of capacitance can be balanced even when the dielectric layers are made thin.
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