The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Mar. 30, 2005
Applicant:
Hitoshi Shiraishi, Tokyo, JP;
Inventor:
Hitoshi Shiraishi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a contact hole in an insulating film coating amorphous Si having an irregular surface formed on an insulating substrate, for connecting the amorphous Si to a conductor film formed on the insulating film, including: etching the insulating film using reactive ion etching to a depth whereat said irregularity does not disappear; and sputter-etching the surface of the amorphous Si.