The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Apr. 21, 2008
Applicants:
William F. Seng, Austin, TX (US);
Richard L. Woodin, North Yarmouth, ME (US);
Carl Anthony Witt, Gorham, ME (US);
Inventors:
William F. Seng, Austin, TX (US);
Richard L. Woodin, North Yarmouth, ME (US);
Carl Anthony Witt, Gorham, ME (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 21/44 (2006.01); H01L 21/441 (2006.01);
U.S. Cl.
CPC ...
Abstract
A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contactis thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.