The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Apr. 03, 2006
Applicants:
Philippe Meunier-beillard, Kortenberg, BE;
Johannes J. T. M. Donkers, Valkenswaard, NL;
Hijzen Erwin, Blanden, BE;
Melai Joost, Enschede, NL;
Inventors:
Philippe Meunier-Beillard, Kortenberg, BE;
Johannes J. T. M. Donkers, Valkenswaard, NL;
Hijzen Erwin, Blanden, BE;
Melai Joost, Enschede, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8249 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention provides a method for fabricating a heterojunction bipolar transistor with a base connecting region (), which is formed self-aligned to a base region () without applying photolithographic techniques. Further, a collector connecting region () and an emitter region () are formed simultaneously and self-aligned to the base connecting region () without applying photolithographic techniques.