The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Aug. 09, 2005
Applicants:
Laura Pescini, Dresden, DE;
Achim Gratz, Dresden, DE;
Veronika Polei, Dresden, DE;
Inventors:
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of selectively forming nanocrystals on semiconductor devices are disclosed. Regions of a workpiece are masked with a masking material, and the nanocrystals are formed on the unmasked regions. The nanocrystals may be formed by exposing the masked workpiece to a first substance, and exposing the workpiece to at least one second substance either before or after the masking material is removed.