The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Jan. 23, 2006
Applicants:
Choong-yul Cha, Yongin-si, KR;
Hoon-tae Kim, Yongin-si, KR;
Sang-gug Lee, Daejeon, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/68 (2006.01);
U.S. Cl.
CPC ...
Abstract
A low noise amplifier (LNA) for ultra wide band receives and amplifies identical RF signals in different frequency bands, and includes more than one pair of narrow band LNAs coupled in parallel, and a load circuit which increases load impedance of the entire circuit of the narrow band LNAs. The LNA can not only amplify the RF signal in the UWB but also obtain the low noise and the high gain that are features of the conventional narrow band LNA.