The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Jun. 25, 2008
Bjørn Blixhavn, Tønsberg, NO;
Bjørn Blixhavn, Tønsberg, NO;
Infineon Technologies SensoNor AS, Horten, NO;
Abstract
An apparatus that reduces parasitic capacitance in a MEMS device includes a dielectric layer on the surface of a silicon-on-insulator (SOI) substrate, a conductor embedded in the substrate and disposed between the dielectric layer and a buried oxide layer, and surface conductors on the dielectric layer and coupled to ends of the embedded conductor. A boundary region surrounds the embedded conductor and separates an inner region and an outer region of substrate, providing a p-n junction between the boundary region and the outer region of SOI substrate which is reverse biased to electrically isolate the inner region from the outer region of SOI substrate. An amplifier has an input connected to one end of the embedded conductor and an output connected to the inner region of the substrate. The amplifier senses a voltage at the input and produces a voltage that approximates the voltage at the output.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile