The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Jun. 23, 2005
Sei-hyung Ryu, Cary, NC (US);
Jason R. Jenny, Wake Forest, NC (US);
Mrinal K. Das, Durham, NC (US);
Anant K. Agarwal, Chapel Hill, NC (US);
John W. Palmour, Cary, NC (US);
Hudson Mcdonald Hobgood, Pittsboro, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Jason R. Jenny, Wake Forest, NC (US);
Mrinal K. Das, Durham, NC (US);
Anant K. Agarwal, Chapel Hill, NC (US);
John W. Palmour, Cary, NC (US);
Hudson McDonald Hobgood, Pittsboro, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer, has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface of the voltage blocking SiC substrate. A third region of SiC is provided on the second SiC layer and has the second conductivity type. A fourth region of SiC is provided in the second SiC layer, has the first conductivity type and is adjacent to the third region of SiC. First and second contacts are provided on the first and third regions of SiC, respectively. Related methods of fabricating high voltage SiC devices are also provided.