The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2009

Filed:

Mar. 29, 2005
Applicants:

Daisuke Sanga, Tokushima, JP;

Takeshi Kususe, Tokushima, JP;

Takahiko Sakamoto, Anan, JP;

Hisashi Kasai, Anan, JP;

Inventors:

Daisuke Sanga, Tokushima, JP;

Takeshi Kususe, Tokushima, JP;

Takahiko Sakamoto, Anan, JP;

Hisashi Kasai, Anan, JP;

Assignee:

Nichia Corporation, Tokushima, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).


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