The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Apr. 27, 2006
Robert E. Fontana, Jr., San Jose, CA (US);
Eric E. Fullerton, Morgan Hill, CA (US);
Stefan Maat, San Jose, CA (US);
Jan-ulrich Thiele, Sunnyvale, CA (US);
Robert E. Fontana, Jr., San Jose, CA (US);
Eric E. Fullerton, Morgan Hill, CA (US);
Stefan Maat, San Jose, CA (US);
Jan-Ulrich Thiele, Sunnyvale, CA (US);
Hitachi Global Storage Technologies Netherlands, B.V., Amsterdam, NL;
Abstract
Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.