The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2009

Filed:

Mar. 09, 2007
Applicants:

Kensuke Takano, Kanagawa, JP;

Ichiro Yamamoto, Kanagawa, JP;

Koji Watanabe, Tokyo, JP;

Inventors:

Kensuke Takano, Kanagawa, JP;

Ichiro Yamamoto, Kanagawa, JP;

Koji Watanabe, Tokyo, JP;

Assignees:

NEC Electronics Corporation, Kawasaki, Kanagawa, JP;

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film formed on the first wafer; and (b) performing coating process including forming a high dielectric constant film on a second wafer; and achieving nitridation of the high dielectric constant film formed on the second wafer. The processing the wafer and the performing the coating process are carried out in the same reaction chamber. The coating process is carried out before the processing the wafer.


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