The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Sep. 19, 2006
Applicants:
Pascal Chevalier, Chapareillan, FR;
Alain Chantre, Seyssins, FR;
Inventors:
Pascal Chevalier, Chapareillan, FR;
Alain Chantre, Seyssins, FR;
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 27/082 (2006.01);
U.S. Cl.
CPC ...
Abstract
A bipolar transistor having a base region resting by its lower surface on a collector region and surrounded with a first insulating layer, a base contact conductive region in contact with an external upper peripheral region of the base region, a second insulating region in contact with an intermediary upper peripheral region of the base region, an emitter region in contact with the central portion of the base region. The level of the central portion is higher than the level of the intermediary portion.