The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Jun. 29, 2007
Applicant:
Yoon Suk Hyun, Seoul, KR;
Inventor:
Yoon Suk Hyun, Seoul, KR;
Assignee:
Hynix Semiconductor, Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a semiconductor device is provided. More specifically, a method for forming a bulb-shaped portion of a bulb-shaped recess gate is provided to overcome an etching process margin reduction caused by a spacer oxide film formed on sidewalls of a recess and thickly laminated to a lower part of a recess. In one aspect, a buffer dielectric film pattern is formed additionally by a plasma enhanced chemical vapor deposition (PECVD) process over a hard mask pattern, so that a sufficient process margin used for forming the bulb-shaped portion is ensured and a process margin for forming a semiconductor device is increased.