The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2009

Filed:

Oct. 13, 2006
Applicants:

Tae-whan Kim, Seoul, KR;

Young-ho Kim, Seoul, KR;

Jae-ho Kim, Seoul, KR;

Jea-hun Jung, Seoul, KR;

Chong-seung Yoon, Seoul, KR;

Inventors:

Tae-whan Kim, Seoul, KR;

Young-ho Kim, Seoul, KR;

Jae-ho Kim, Seoul, KR;

Jea-hun Jung, Seoul, KR;

Chong-seung Yoon, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor substrate to define a channel region therebetween, a tunneling dielectric layer located on the channel region, an organic polymer thin film located on the tunneling dielectric layer, metal or metal oxide nano-crystals embedded in the organic polymer thin film, and a gate located on the organic polymer thin film.


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