The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Dec. 15, 2004
Sang-woong Lee, Seoul, KR;
Jae-young OH, Suwon-si, KR;
Tae-hoon Yang, Seongnam-si, KR;
Jin-wook Seo, Suwon-si, KR;
Ki-yong Lee, Yongin-si, KR;
Cheol-ho Yu, Suwon-si, KR;
Sang-Woong Lee, Seoul, KR;
Jae-Young Oh, Suwon-si, KR;
Tae-Hoon Yang, Seongnam-si, KR;
Jin-Wook Seo, Suwon-si, KR;
Ki-Yong Lee, Yongin-si, KR;
Cheol-Ho Yu, Suwon-si, KR;
Samsung Mobile Display Co., Ltd., Yongin, KR;
Abstract
The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline silicon layer having large grain size and containing a trace of residual metal catalyst by heat treating thereby crystallizing the metal catalyst layer after forming an amorphous silicon layer on a substrate, forming a capping layer formed of nitride film having 1.78 to 1.90 of the refraction index when crystallizing the amorphous silicon layer and forming a metal catalyst layer on the capping layer, but also controls characteristics of the polycrystalline silicon layer by controlling the refraction index of the capping layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile