The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Aug. 15, 2007
Rajaram Bhat, Painted Post, NY (US);
Jerome Napierala, Painted Post, NY (US);
Dmitry Sizov, Painted Post, NY (US);
Chung-en Zah, Holmdel, NJ (US);
Rajaram Bhat, Painted Post, NY (US);
Jerome Napierala, Painted Post, NY (US);
Dmitry Sizov, Painted Post, NY (US);
Chung-En Zah, Holmdel, NJ (US);
Corning Incorporated, Corning, NY (US);
Abstract
Ga(In)N-based laser structures and related methods of fabrication are proposed where Ga(In)N-based semiconductor laser structures are formed on AlN or GaN substrates in a manner that addresses the need to avoid undue tensile strain in the semiconductor structure. In accordance with one embodiment of the present invention, a Ga(In)N-based semiconductor laser is provided on an AlN or GaN substrate provided with an AlGaN lattice adjustment layer where the substrate, the lattice adjustment layer, the lower cladding region, the active waveguiding region, the upper cladding region, and the N and P type contact regions of the laser form a compositional continuum in the semiconductor laser. Additional embodiments are disclosed and claimed.